| 摘要 |
1,061,625. Decreasing the forward voltage drop in a rectifier. ALLMANNA SVENSKA ELEKTRISKA A.B. June 30, 1964 [July 1. 1963], No. 26923/64. Heading H1K. The forward voltage drop is decreased in a rectifying semi-conductor body such as a rectifier diode or a thyristor, having a middle zone of low conductivity and end zones of mutually opposite but high conductivity types by directly subjecting the middle zone to a beam of photons during the forward period of the body thus generating hole-electron pairs in the middle zone which raise the conductivity thereof. In Fig. 6, a series of light-emitting diodes 5 are arranged to shine on to the middle zones 11 and 12 of an emitter-controlled thyristor 10. In modifications (Figs. 1 to 4, not shown), only one light-emitting diode may be used whilst the emitter-controlled thyristor may be replaced by a photo-controlled thyristor or a rectifier diode having a low-conductivity middle zone. In another modification (Fig. 7, not shown) the light-emitter diodes may be arranged in the same plane as the rectifier and a prism used to reflect the light on to the rectifier. In Fig. 10 an annular emitter-controlled thyristor 35 having a gate electrode 42 is held in metal base 30 but insulated therefrom by a heat-conducting layer of beryllium oxide 29. A metal piece 28 joins the thyristor to the light-emitting diodes 5 which have an electrical connection at 32. Light emitted from the diodes 5 is reflected on to the thyristor middle zones 39 and 40 by a prism 41. A modification (Fig. 9, not shown) has the thyristor replaced by a rectifier having a low-conductivity centre zone and uses only one emitter diode and a curved reflector. In another embodiment (Figs. 11 and 12, not shown) a series of parallelepipedic rectifier bodies are arranged side by side with like conductivity zones adjacent, but separated from each other by intermediate conducting layers to the ends of which are connected the light-emitting diodes perpendicularly to the longitudinal axes of the rectifier bodies. The light is reflected on to the rectifier bodies whilst the whole arrangement lies on a beryllium oxide layer and a cooling plate of molybdenum or copper which may be water cooled. The rectifying bodies may be of Si or Gre doped with B and P, whilst the light-emitting diodes may be GaAs doped with Te and Zn or have an additional layer of doped ZnSe. GaAsP, GaSb, GaP and InP diodes are also said to be suitable. The semi-conductor bodies may also be cooled by Peltier effect. |
