发明名称 SOLAR BATTERY AND ITS MANUFACTURE
摘要 PURPOSE:To enable mass production and a large area by using a hetero junction which is formed on a crystalline silicon substrate and a silicon wide band gap window layer formed by capacitive coupling type plasma CVD method thereon. CONSTITUTION:A hetero junction is formed between a layer 1 consisting of first conductivity crystalline silicon and a silicon and oxygen-based second conductivity hydro-amorphous silicon thin film 2. Light absorption coefficient of an oxygen added hydro-amorphous silicon material reduces with an addition amount of oxygen and its photoelectromotive force generated by the hetero junction increases. Since the thin film 2 can be formed by a capacitive coupling plasma CVD method, it can be formed uniformly at a low temperature on a crystalline silicon substrate of a large area or laminated together with a polycrystalline silicon thin film.
申请公布号 JPH05299677(A) 申请公布日期 1993.11.12
申请号 JP19920105006 申请日期 1992.04.24
申请人 FUJI ELECTRIC CO LTD 发明人 ASANO AKIHIKO;ICHIKAWA YUKIMI
分类号 H01L31/04;H01L31/0745;H01L31/20 主分类号 H01L31/04
代理机构 代理人
主权项
地址