发明名称 |
SOLAR BATTERY AND ITS MANUFACTURE |
摘要 |
PURPOSE:To enable mass production and a large area by using a hetero junction which is formed on a crystalline silicon substrate and a silicon wide band gap window layer formed by capacitive coupling type plasma CVD method thereon. CONSTITUTION:A hetero junction is formed between a layer 1 consisting of first conductivity crystalline silicon and a silicon and oxygen-based second conductivity hydro-amorphous silicon thin film 2. Light absorption coefficient of an oxygen added hydro-amorphous silicon material reduces with an addition amount of oxygen and its photoelectromotive force generated by the hetero junction increases. Since the thin film 2 can be formed by a capacitive coupling plasma CVD method, it can be formed uniformly at a low temperature on a crystalline silicon substrate of a large area or laminated together with a polycrystalline silicon thin film. |
申请公布号 |
JPH05299677(A) |
申请公布日期 |
1993.11.12 |
申请号 |
JP19920105006 |
申请日期 |
1992.04.24 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
ASANO AKIHIKO;ICHIKAWA YUKIMI |
分类号 |
H01L31/04;H01L31/0745;H01L31/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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