| 摘要 |
<p>PURPOSE:To provide an electrostatic attracting apparatus which can increase a self-bias voltage of plasma by enlarging an electrostatic capacitance between a wafer and a high frequency application electrodes and can improve processing efficiency of wafer by increasing incident efficiency of ion to wafer. CONSTITUTION:In an electrostatic attracting apparatus wherein a first insulating film 4 is formed on a high frequency application electrode 1, an electrostatic attracting electrode 5 is formed on the first insulating film 4, a second insulating film 7 is formed on the electrostatic attracting electrode 5 and a wafer 8 is electrostatically attracted on the second insulating film 7, thickness of the first insulating film 4 provided between the high frequency application electrode 1 and the electrostatic attracting electrode 5 is set to 0.1mm or thicker but 1mm or thinner. Otherwise, a specific dielectric constant of the first insulating film 4 is set to 3 or larger, or an area of the first insulating film 4 is set to 80% or larger than the area of the wafer 8, or a specific resistance of the first insulating film 4 is set to 10<12> ohms-cm or smaller.</p> |
