| 摘要 |
<p>PURPOSE:To enable the uniform and effective execution of the solid phase growth treatment of a polycrystalline semiconductor layer formed along the inside wall of a trench. CONSTITUTION:The liquid crystal display device of an active matrix type is constituted of a pair of insulating substrates 1 and a liquid crystal layer held therebetween. Picture element electrodes 2 arranged in a matrix form, thin-film transistors(TFTs)3 connected to these picture element electrodes 2 and auxiliary capacitors 4 for holding the charges of the picture element electrodes 2 are formed on the one insulating substrate 1. The TFTs 3 consist of the polycrystalline semiconductor layers 6 formed along the inside walls of trench parts 5 which are formed on the insulating substrate 1 and have tapered flanks, gate insulating films 7 formed on these polycrystalline semiconductor layers and gate electrodes 8 formed on the gate insulating films 7. Since the polycrystalline semiconductor layers 6 are formed along the tapered surfaces, the overall ion implantation of Si<+> ions is possible and the uniform solid phase growth treatment is attained. On the other hand, the polycrystalline semiconductors constituting the first electrodes 13 of the auxiliary capacitors 4 formed in another trench parts 12 contain the crystals having the grain diameter sizes larger than the film thickness thereof and can improve a frequency follow-up characteristic.</p> |
