发明名称 POSITIVE RADIATION RESIST AND FORMING METHOD FOR RESIST PATTERN
摘要 PURPOSE:To improve sensitivity and etching durability by applying a resist obtd. by mixing specified copolymers and an oxygen generating material on a substrate to be treated, selectively exposing the resist to radiation, and then developing with alkali. CONSTITUTION:The resist consists of a mixture of copolymers and an oxygen generating agent which produces oxygen by radiation. These copolymers are copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5-ene-2-carboxylic acid ester having a repeating unit of formula. In formula, R is a t-butyl group or tetrahydropyranyl group. This resist is prepared by mixing an oxygen generating agent which produces oxygen by radiation and copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5ene-2-carboxylic acid ester, and the obtd. resist is applied on a substrate to be treated, selectively exposed to radiation, and developed with alkali to form a resist pattern.
申请公布号 JPH05297591(A) 申请公布日期 1993.11.12
申请号 JP19920099967 申请日期 1992.04.20
申请人 FUJITSU LTD 发明人 NOZAKI KOJI;KAIMOTO HIROKO
分类号 G03F7/029;G03F7/039;H01L21/027;H01L21/30;(IPC1-7):G03F7/039 主分类号 G03F7/029
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