摘要 |
PURPOSE:To improve sensitivity and etching durability by applying a resist obtd. by mixing specified copolymers and an oxygen generating material on a substrate to be treated, selectively exposing the resist to radiation, and then developing with alkali. CONSTITUTION:The resist consists of a mixture of copolymers and an oxygen generating agent which produces oxygen by radiation. These copolymers are copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5-ene-2-carboxylic acid ester having a repeating unit of formula. In formula, R is a t-butyl group or tetrahydropyranyl group. This resist is prepared by mixing an oxygen generating agent which produces oxygen by radiation and copolymers of N-cyclohexyl maleimide and bicyclo[2,2,1]hepto-5ene-2-carboxylic acid ester, and the obtd. resist is applied on a substrate to be treated, selectively exposed to radiation, and developed with alkali to form a resist pattern. |