| 摘要 |
PURPOSE:To reduce fluctuation of resistance to be provided to two nodes of a cell forming a semiconductor device and stabilize operation thereof. CONSTITUTION:A length of resistance is determined on the self-alignment basis by the distance (d) between a gate electrode 3 of a drive MOS type transistor and a transfer type MOS transistor 4. The resistance is formed by a polysilicon 9 and an n<-> type resistance layer 10. Moreover, the gate electrode 3 is connected electrically with a drain or source of the transfer type MOS transistor through the polysilicon 9. |
