| 摘要 |
PURPOSE:To shorten the time for simulation and to improve accuracy while effectively obtaining the electronic drift speed on the basis of the calculation by including the stage calculating the relation between the electric field intensity in the semiconductor area and the drift speed of the carrier electron based on the specific formula. CONSTITUTION:The method of simulating semiconductor using the one containing impurities which generates a density N of carrier electron indicating the negative differential resistance includes a stage calculating the relation between the electric field intensity E in the prescribed area of the semiconductor and the drift speed of the carrier electron by means of a formula. In the formula, muo and upsilons represent the constant which depends on the semiconductor characteristic and N, and E1, E2, and N1 represent the constant which depends on the characteristic of the semiconductor. In short, the constant Eo in the conventional approximated formula is corrected as Eo=E1+E2exp(-N/N) by means of the constants E1, E2, and N1 set depending on the only semiconductor characteristic and independent of the electric field intensity E and the ionization impurity density N. |
