摘要 |
<p>A circuit for the fast turning off of a field effect transistor (FET) used in a power converter circuit or the like is disclosed. The FET turning off circuitry includes a gate current sink transistor operative for counteracting the effects of the parasitic capacitances of the FET device with the addition of a capacitor linked between the base of the gate current sink transistor and the drain of the FET. This capacitor increases the current into the base of the gate current sink transistor, and enables an increased magnitude of current to flow from the FET, thereby increasing the speed with which the FET turns off. A diode is preferably also connected between the base and the emitter of the gate current sink transistor to provide a return path to discharge the capacitor.</p> |