Method of providing an ohmic contact on a ZnSe layer.

摘要

Method of providing an ohmic contact on a ZnSe layer (2) provided on a substrate (1) by wetting the layer with a Hg containing liquid and heating the layer to a temperature in excess of 200 DEG C. The layer of ZnSe (2) is wetted and heated by immersing the substrate in a Hg containing bath heated to a temperature in excess of 200 DEG C but not greater than 350 DEG for a time greater than 120 minutes. The method can be used to make an ohmic contact on a p-type, nitrogen doped layer of ZnSe. After a time greater than 120 minutes a contact layer is formed on the layer which consists of HgxZn1-xSe, in which x varying from 0 at the surface of the ZnSe layer to 1 at the outer surface of the contact layer. The layer grown forms an ohmic contact to a layer of nitrogen doped ZnSe.