发明名称 Method for forming via holes in polymer materials.
摘要 <p>The surface of a polymer dielectric layer (202) is scanned repeatedly with a high energy continuous wave laser (200) in a pattern to create via holes of desired size, shape and depth. This can be followed by a short plasma etch. The via holes can be produced at commercial production rates under direct computer control without use of masks and without damage to conductor material underlying the dielectric layer. A two-step technique usable to form a large hole to a partial depth in the dielectric layer and several smaller diameter holes within the large hole through the remainder of the dielectric layer depth allows formation of a large number of holes in a given area of a thick dielectric layer.</p>
申请公布号 EP0388009(B1) 申请公布日期 1993.11.10
申请号 EP19900301498 申请日期 1990.02.13
申请人 GENERAL ELECTRIC COMPANY 发明人 EICHELBERGER, CHARLES WILLIAM;WELLES, KENNETH BRAKELY, II;WOJNAROWSKI, ROBERT JOHN
分类号 B23K26/00;B23K26/38;H01L21/302;H01L21/3065;H01L21/311;H01L21/768;H01L23/522;H01L23/538;H01L27/01;H01S3/00;H05K3/00;(IPC1-7):B23K26/00 主分类号 B23K26/00
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