Field effect transistor controlled thyristor having improved turn-on characteristics

摘要

A composite thyristor comprising a plurality of parallel connected identical thyristor cells, each of the cells including a turn-on field effect transistor (FET) and a turn-off FET. The gate electrodes of all the FETs form a grid-like pattern on a surface of the semiconductor substrate of the device. The pattern includes strips which intersect at corners. Turn-off FETs are formed along the boundary of the grid and beneath it, and turn-on FETs are disposed beneath the corners.