发明名称 |
Phase shifting mask and method of manufacturing same |
摘要 |
A method for manufacture of such a phase shifting mask comprises the steps of forming a light shielding layer on a substrate; forming a photoresist on the light shielding layer; patterning the photoresist to form a resist pattern; providing an opening in the light shielding layer by the use of the resist pattern as a mask, thereby forming a light shielding pattern; etching the substrate anisotropically to form a phase shifting segment; side etching the light shielding pattern to form a light shielding region; and removing the resist pattern.
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申请公布号 |
US5260152(A) |
申请公布日期 |
1993.11.09 |
申请号 |
US19920874211 |
申请日期 |
1992.04.27 |
申请人 |
SONY CORPORATION |
发明人 |
SHIMIZU, HIDEO;HAWAHIRA, HIROICHI |
分类号 |
G03F1/00;G10D13/06;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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