发明名称 Phase shifting mask and method of manufacturing same
摘要 A method for manufacture of such a phase shifting mask comprises the steps of forming a light shielding layer on a substrate; forming a photoresist on the light shielding layer; patterning the photoresist to form a resist pattern; providing an opening in the light shielding layer by the use of the resist pattern as a mask, thereby forming a light shielding pattern; etching the substrate anisotropically to form a phase shifting segment; side etching the light shielding pattern to form a light shielding region; and removing the resist pattern.
申请公布号 US5260152(A) 申请公布日期 1993.11.09
申请号 US19920874211 申请日期 1992.04.27
申请人 SONY CORPORATION 发明人 SHIMIZU, HIDEO;HAWAHIRA, HIROICHI
分类号 G03F1/00;G10D13/06;(IPC1-7):G03F9/00 主分类号 G03F1/00
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