| 摘要 |
PURPOSE:To easily obtain silicon carbide having a low metal impurity content with a device for producing silicon carbide by chemical vapor deposition with silane as a starting material by forming at least the surface of the interior of the reaction chamber of the device with Ni (alloy). CONSTITUTION:Metal members in the reaction chamber of a device for producing high purity silicon carbide are formed with Ni (alloy) or a metal plated with Ni (alloy). When silicon carbide is produced with this device by chemical vapor deposition with silane as the starting material, the corrosion of the constituent materials of the reaction chamber does not proceed and the amt. of metals penetrating into silicon carbide is reduced to enhance the purity of the resulting silicon carbide. Thus, the purity of the silicon carbide film of a constituent member for a semiconductor diffusion furnace or that of a susceptor for epitaxial growth is enhanced and the contamination of an Si wafer by impurities is considerably reduced. |
