| 摘要 |
PURPOSE:To provide a manufacture of a semiconductor device in which effective surface area is increase for same surface area in order to eliminate decrease in storage charge quantity due to decrease in cell area per bit, i.e., capacitor area, caused by high density of semiconductor memory. CONSTITUTION:A surface layer is modified into a silicon nitride film 109(a) by ion-implanting nitrogen in the surface layer of a polycrystalline silicon 109 used as a bottom electrode of a capacitor. Then, the surface of the polycrystalline silicon 109 used as the bottom electrode is formed into a rough surface 109(b) having an unevenness by removing the silicon nitride film 109(a) through an etching. |
