| 摘要 |
PURPOSE:To prevent the decrease in capacity value of a capacitor element due to reduction in element size accompanied by high integration of semiconductor device. CONSTITUTION:A step formed by an etching using a first bottom capacitor electrode 3a as a mask is formed on an interlayer insulating film 2 installed on a P-type silicon substrate 1. A second bottom capacitor electrode 3b is formed on a sidewall of the first bottom capacitor electrode 3a and a sidewall of the step on the interlayer insulating film 3. A capacitor insulating film 4 is formed so as to cover the first and second bottom capacitor electrodes 3a and 3b. A top capacitor electrode 5 is formed so as to cover the capacitor insulating film 4. Therefore, the sidewall of the interlayer insulating film 2 can be used as a capacitor part and the area of capacitor electrode can be increased, and then a sufficient capacity value can be obtained even if an element size is small. |
