| 摘要 |
The NMOS is manufactured by forming a gate oxide film (2) and an amorphous polysilicon film (4') on 1st conductive type semiconductor substrate (1), selectively etching the amorphous film (4') to form a gate (4'a), implanting 1st conductive type impurity on all area to form ion implanting film (7) of different thicknesses at the lower gate part and the rest for controlling threshold voltage and preventing punch through, forming a sidewall spacer (5) at the gate side face, implanting 2nd conductive type impurity to form high concn. 2nd conductive type source and drain (6).
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