| 摘要 |
<p>PURPOSE:To reduce the number of processes and improve the quality in the manufacture of a longitudinal type semiconductor element such as a Gun diode. CONSTITUTION:This includes the steps of forming a longitudinal structure with an electrode on a semiconductor substrate (A), bonding it for fixation on a holding body 17 through a layer of a bonding agent and at the same time covering its surface with a resist layer 18 (B), fully cutting it in the direction of the thickness to separate it into a group of longitudinal type semiconductor elements (C), dipping the whole into an etching solution EC to remove a damaged layer on the side of each element formed with the mechanical cutting (C) and then removing the group of the semiconductor elements from the holding body 17.</p> |
