Reactive magnetron sputtering device for application of insulating or low conductivity layer - uses anode potential for relative isolation of all parts in contact with plasma on outside of cathode target

摘要

The magnetron sputtering device allows a substrate to be coated with an insulating or low conductivity layer using a magnet system (2) enclosing a target (3), an anode (5) around the magnet system, a plasma screen (8) and a current supply. The anode lies outside the plasma screen by a gap (6) of 6 mm or less with a distance (a) of column of more between the anode and the top edge of the plasma screen. All parts of the magnetron outside the target in contact with the plasma are isolated relative to one another via the anode potential. USE/ADVANTAGE - For applying Al2O3 or SiO2 layers with long-term stability e.g. to magnetic heads as wear-protection layers.