| 摘要 |
<p>PURPOSE:To read accurate memory content by absorbing a potential variation due to disturbance by sufficient writing amount or erasing amount. CONSTITUTION:A variable potential setter VE1 is connected as pulling-up means of a point B. The setter VE1 has transistors Tr6D, Tr11, and the relationship of driving capacities of the Tr6D, the Tr11 is set so as to satisfy Pb1<Pb2. Pull-up driving capacity of a dummy side is formed so as to be varied in two ways. One is the same driving capacity Pb1 as prior art, and the other is slightly stronger driving capacity Pb2 than that of the prior art. A normal mode, a write/verify mode can be switched by using the Tr6D, the Tr11 and a control signal CE.</p> |
