| 摘要 |
PURPOSE:To etch GaAs and ZnSe layers selectively by using an aqueous solution of hydrogen chloride and hydrogen peroxide. CONSTITUTION:A structure of epitaxial ZnSe layers 2 and epitaxial GaSa layers 3 is covered with an etching mask 5, and it is immersed in aqueous solution of hydrogen chloride and hydrogen peroxide. As a result, the uncovered portions are etched, and the etch rate decreases at the border of the GaAs layer 3. If the thickness of the ZnSe layer 2 is known beforehand, a predetermined process can be carried out by taking the structure out of the solution when the border of the epitaxial layer 3 is reached. Accordingly, the ZnSe layer can be etched selectively from the GaAs layer. |
