| 摘要 |
<p>PURPOSE:To manufacture the title semiconductor circuit device having excellent bonding characteristics furthermore capable of coping with the through hole fill up step in the manufacturing method of said semiconductor integrated circuit device. CONSTITUTION:The lower layer conductive film (the second aluminum film 13) formed on a semiconductor substrate 10 and the upper layer conductive film (the third aluminum film 15) formed through the intermediary of a layer insulating film (second layer insulating film 14) are electrically connected by fine through holes 14a, furthermore, the upper layer conductive film 15 are extensively formed to the plane region wherein the lower layer conductive film 13 does not exist so as to compose an electrode pad using the extensively formed part as a bonding part of a wire. Through these procedures, the through holes 14a can be formed in minute diameter thereby enabling the bonding characteristics of the electrode pad to be enhanced while coping with the through hole fill up step.</p> |
