| 摘要 |
PURPOSE:To realize a memory in which both areas to be used as a DRAM and a ROM exist in mixture by initializing. a data memory node of a first memory cell to a third reference potential by initializing means and then reading it. CONSTITUTION:A memory cell is formed of a first memory cell 34 and a second memory cell 35. A memory cell.transistor 35a of the cell 35 and a capacitor 35b are set substantially to an electrically non-connected state. A bit line 47 (or 48) to be connected with the cell 34 or 35 is precharged to a second reference potential of a VCC potential by a bit line precharge signal generator 44. Then, a data memory node of a memory cell.transistor 34b of the cell 34 is initialized to a third reference potential of a GND potential by initializing means, and then read. |
