| 摘要 |
PURPOSE:To provide a TFT in which a leakage current is small and a fine structure is obtained easily CONSTITUTION:A field oxide film 112 having a protrusion 112a with a height, of about 0.1mum is formed on a P-type silicon substrate 101. A channel, region 111a of a TFT is formed only on the side of the protrusion 112a. A P<+>-type source region 115 and a P<+>-type drain region 116 of the TFT having a structure in which their regions are respectively connected to the channel region 111a are formed on the protrusion 112a and the field oxide film 112. The channel region 111a is covered by a gate electrode through a gate oxide film 113a. The channel region 111a is perpendicular to the surface of the silicon substrate 101 and a channel width of the channel region 111a is narrowed extremely. A channel current flows in parallel with the surface of the silicon substrate 101. |
