| 摘要 |
PURPOSE: To form an etching pattern accurately, without increasing the number of processes by using a photoresist pattern with space and line widths not larger than 3μm to remove etchings and form etching pattern. CONSTITUTION: Forming on the surface of a conductive layer 15 an etching mask comprising a number of photoresist lines of a preset pattern, the width between photoresist lines is formed to be not larger than 3μm. Depositing a negative-type photosensitive resin 18 on the surface of a semiconductor device, light having a preset pattern is projected on the photosensitive resin 18. Developing the negative-type photosensitive resin 18 by a developing solution, the photosensitive resin portion 18 not polymerized by the bridging reaction of the contacting action of the light is removed, and further, the negative-type photosensitive resin 18 present in a portion 14 recessed inside is removed also. Thereby, the etching pattern can be formed without being effected by remaining photoresist material. |
