| 摘要 |
PURPOSE:To obtain a wire bonding method by which the bonding strength between an insulated wire and the inner lead of a package can be increased by bonding the wire to the inner lead after completely removing the sheath of the wire at the time of bonding the wire for continuity between the chip of semiconductor device and the inner lead of the package. CONSTITUTION:In the title method for bonding a semiconductor chip 1 to the inner lead 2 of a lead frame with an insulated wire 3, the wire 3 is bonded to the lead 2 after the wire 6 inside the insulated wire 3 is exposed by stripping off the sheath 4 of the wire 3 with a file-like rough surface 5. |
