| 摘要 |
PURPOSE:To manufacture the title stably actuating semiconductor end light emitting element by a method wherein a photoabsorption part is provided in at least a part of an upper clad layer on a non-active region. CONSTITUTION:An upper electrode 7 and a contact layer 5 are not provided until at the position of a boundary part 24 distant from the second end 11 by specific distance while the surface of an upper clad layer 4 is etched away so as to form a photoabsorption part 21 comprising an oxide film and a surface level on the remaining upper clad layer 4. On the other hand, the etched away part becomes a non-active region 25 so that the electrooptical action may not be initiated inside the title semiconductor end light emitting element but on the contrary, acting to intensively absorb the light resultantly absorbing the inversely emitted light advancing in the opposite direction to that of the outgoing light 30 in this non-active region 25. Accordingly, the electron holecouple generated by said photoabsorption can be efficiently non-luminescence recoupled in the photoabsorption part 21 comprising the oxide film and the surface level provided in the non-active region 25 thereby enabling the stable action causing no laser oscillation at all to be performed. |
