| 摘要 |
<p>PURPOSE:To hold high reliability by storing an address of a block containing a defective page at the time of generating a defect of a destructive mode, and executing an alternate process. CONSTITUTION:Memory means 1 has a memory cell array divided into blocks formed of a plurality of pages and a nonvolatile memory function. If a destruction occurs during writing of a tunnel oxide film of a memory cell, a CPU 14 detects the destructive page, stores an address of the block including the detected destructive page, and alternatively processes the block including the defective page with other block. Thus, when a defect which can be corrected by ECC occurs, it is thereafter so processed that an apparatus can confirm that the pages are defective, and it is alternatively processed with other block, and hence high reliability is maintained.</p> |
