| 摘要 |
PURPOSE:To realize a low threshold voltage for a DMOS while avoiding lowering of a reach through breakdown strength in an intelligent power element wherein a control element such as DMOS and NMOS is integrated. CONSTITUTION:Surface concentration of a channel well region 4 of a DMOS is formed low and inside concentration thereof is formed high. Thereby, a reach through strength of the DMOS is made lower than a reach through strength of an NMOS to generate reach through in a DMOS part of a large current allowable capacity (breakdown strength) and not to generate it in an NMOS of a small current allowable capacity. Furthermore, an inside high concentration well region which does not attain immediately below a gate electrode 71 is formed thick above a deep main well region 31 of the DMOS and shallower than the main well region 31, thus achieving the same effect as the above by lowering a reach through strength of the DMOS. |
