| 摘要 |
<p>PURPOSE:To prevent deformation of a substrate which is generated by the cause that only the side where a silicon thin film is formed is heated, in a lamp annealing method which is used for crystallization of a silicon thin film constituting a thin film transistor. CONSTITUTION:A light absorption layer 104 is formed on a silicon thin film 102 formed on a substrate 101, and a light absorption layer 105 composed of material whose absorption edge is different from that of the layer 104 is formed on the rear side of the substrate.</p> |
