发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To reduce the effect of noise and to lessen a signal delay without increasing a circuit scale, by a method wherein data read onto a bit line are transferred onto a first data line as they are, while they are converted into a current signal when they are transferred onto a second data line. CONSTITUTION:Stored data are read out onto bit lines 2 and bar 2 from a memory cell selected alternatively by a word line on the basis of a row address and an H/L level of a minute voltage signal thereof is decided by a sense amplifier. Then, MOSFETs 7a and 7c on the gates of which voltage signals on first data lines 3 and bar 3 are impressed change drain currents in accordance with the voltages impressed thereon, and thereby the voltage signals on the data lines 3 and bar 3 are converted into current signals and transferred onto second data lines 6 and bar 6. The current signals transferred onto the data lines 6 and bar 6 are amplified by an amplifier 9, and therefore only the data of an address specified thereby are outputted.
申请公布号 JPH05282860(A) 申请公布日期 1993.10.29
申请号 JP19920081175 申请日期 1992.04.02
申请人 发明人
分类号 G11C11/417;G11C11/401;G11C11/409;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/417
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