| 摘要 |
PURPOSE:To provide the title light emitting element capable of externally emitting almost specific quantity of light without depending upon the rise in temperature of the light emitting part. CONSTITUTION:A P-N junction is formed of a P type GaAsP semiconductor layer 10 and N type GaAsP semiconductor layer 12 so as to emit light by impressing a positive electrode 14 and a negative electrode 16 with a normal directional voltage. Next, an optical filter 20 is formed by laminating titanium oxide thin films 20a in refractive index of 2.35 and film thickness of 60nm as well as silicon oxide films 20b in refractive index of 1.35 and film thickness of 104nm are alternately laminated to form an optical filter 20. The optical filter 20 can meet the requirement of dT/dlambdac>=0 (where lambdac represents the central wavelength of the spectrum) for transmittivity T which is to be increased when the light emitting wavelength is shifted to the longwavelength side resultant from the temperature rise of the light emitting part so as to compensate the decline in light quantity from the light emitting part. |
