PATTERN FORMING METHOD AND MANUFACTURE OF OFFSET GATE FIELD-EFFECT TRANSISTOR WHICH USES SAME METHOD,申请号JP19920076600-传众专利搜索

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发明名称	PATTERN FORMING METHOD AND MANUFACTURE OF OFFSET GATE FIELD-EFFECT TRANSISTOR WHICH USES SAME METHOD
摘要
申请公布号	JPH05283436(A)	申请公布日期	1993.10.29
申请号	JP19920076600	申请日期	1992.03.31
申请人		发明人
分类号	H01L21/28;H01L21/338;H01L29/812;(IPC1-7):H01L21/338	主分类号	H01L21/28
代理机构		代理人
主权项
地址

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