| 摘要 |
<p>Various novel lift-off and bonding processes (60, 80, 100) permit lift-off of thin film materials and devices (68), comprising InxGa1-xAsyP1-y where 0<x<1 and 0<y<1, from a growth substrate (62) and then subsequent alignable bonding of the same to a host substrate (84). As a result, high quality communication devices can be fabricated for implementing a three dimensional electromagnetic communication network within a three dimensional integrated circuit cube (10), an array (90) of optical detectors (98) for processing images at very high speed, and a micromechanical device (110) having a platform (114) for steering or sensing electromagnetic radiation or light.</p> |
