Diamantschichten mit hitzebeständigen Ohmschen Elektroden und Herstellungsverfahren dafür

摘要

A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0x1019 to 1.8x1023 cm-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0x1020 to 5.0x1022 cm-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.