发明名称 Superconducting yttrium-barium-copper oxide complex prodn. with grain boundary - comprises growing yttrium-stabilised zirconia on sapphire substrate, applying magnesium oxide layer, structuring and growing strontium-titanium oxide layer
摘要 Prodn. comprises: (a) growing epitaxially an intermediate layer (2) contg. Y-stabilised ZrO2 on a sapphire (Al2O3) substrate (1); (b) applying an MgO layer (3) on the layer (2), (c) structuring the MgO layer (3) so that the surface of the layer (2) is partially exposed and a formed edge (3a) of layer (3) defines the course of the grain boundary (4a,5a); (d) epitaxially growing an SrTiO3 layer (4) on the surface of the structured MgO layer and the exposed surface of the intermediate layer; and (e) epitaxially growing a superconducting layer (5) on the SrTiO3 layer (4). The substrate (1) is pref. heated to promote growing, pref. to at least 500 deg. C.. The intermediate layer (2) is pref. grown on a surface parallel to the R-plane of the substrate (1). The intermediate layer (2) is pref. grown of thickness 30-50nm. USE/ADVANTAGE - Used in various constructional elements, where grain boundaries are used as weak links in the mfr. of SQUID'S. The superconducting layer has an improved crystal quality.
申请公布号 DE4213432(A1) 申请公布日期 1993.10.28
申请号 DE19924213432 申请日期 1992.04.23
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 SCHMIDT, HARALD, DR., 8000 MUENCHEN, DE;VOLLNHALS, GERHARD, 8070 INGOLSTADT, DE;WERSING, WOLFRAM, 8048 KIRCHHEIM, DE
分类号 B32B18/00;C04B35/45;C30B23/02;H01L39/24 主分类号 B32B18/00
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