| 摘要 |
PURPOSE:To make a contact hole shallow when constituting a diffusion layer and a wiring electrode of a semiconductor storage device of a multilayer wiring structure. CONSTITUTION:A gate electrode 1 is formed in a stepped part 9 and a capacitor is formed above the gate electrode 1. Since a contact hole is thereby made shallow when compared to a conventional one, a wiring material is surely attached as far as a diffusion layer 2 when a bit line is wired, thereby enabling connection to a deep part of a contact. |
