DOPING METHOD OF BARRIER REGION IN SEMICONDUCTOR DEVICE,申请号EP19900122948-传众专利搜索

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发明名称	DOPING METHOD OF BARRIER REGION IN SEMICONDUCTOR DEVICE
摘要
申请公布号	EP0430275(A3)	申请公布日期	1993.10.27
申请号	EP19900122948	申请日期	1990.11.30
申请人	SEIKO INSTRUMENTS INC.	发明人	AOKI, KENJI, C/O SEIKO INSTRUMENTS INC.;AKAMINE, TADAO, C/O SEIKO INSTRUMENTS INC.;SAITO, NAOTO, C/O SEIKO INSTRUMENTS INC.
分类号	H01L21/225;H01L21/336;H01L21/762;H01L29/06;H01L29/10;(IPC1-7):H01L21/225;H01L21/76;H01L29/784	主分类号	H01L21/225
代理机构		代理人
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