Strained layer InP/InGaAs quantum well laser

摘要

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In0.53Ga0.47As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In0.75Ga0.25As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 mu m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5x1017/cm3 to about 2x1018/cm3. Hydrogen sulfide is used for n-type dopant in the substrate at a concentration level in the range of about 1x1018/cm3.