| 摘要 |
PURPOSE:To make the coefficient of temperature satisfactory, by growing a substance whose coefficient of linear expansion is different on a quartz substrate plate in hot water. CONSTITUTION:Single crystal such as Al2O3, ZnO, AlPO4, etc. is grown on quartz by means of hydrothermal synthesis. In this case, a turning point of a quartz wafer is important, therefore it is processed by making allowances for the rotary angle around the X axis. All quartz is grown in an Ag capsule. A quartz wafer is suspended in it. After raw material has been put into the lower part of the capsule, it is filled with a solution for etching. After that, single crystal is grown on the quartz wafer by covering the capsule and raising a temperature. |
