发明名称 |
Apparatus for growing single crystals of III-V compound semiconductors |
摘要 |
An apparatus for growing single crystals of III-V compound semiconductors of the vapor pressure control type using a vertical puller characterized by dividing the surface area of a melt into two sections, covering one section with a liquid encapsulant while maintaining the other section in contact with the atmosphere of the vessel (furnace). The apparatus comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of the melt contained in the crucible. As a result, single crystals of III-V compound semiconductors having various excellent properties such as low impurity content (high purity), low dislocation density and the like maybe obtained.
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申请公布号 |
US5256381(A) |
申请公布日期 |
1993.10.26 |
申请号 |
US19920842979 |
申请日期 |
1992.02.28 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TADA, KOJI;TATSUMI, MASAMI |
分类号 |
C30B27/02;(IPC1-7):C30B35/00 |
主分类号 |
C30B27/02 |
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