Semiconductor memory device wherein gate electrode thickness is greater in the memory cells than in the peripheral cells,申请号US19910722847-传众专利搜索

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发明名称	Semiconductor memory device wherein gate electrode thickness is greater in the memory cells than in the peripheral cells
摘要
申请公布号	US5256892(A)	申请公布日期	1993.10.26
申请号	US19910722847	申请日期	1991.06.28
申请人	NEC CORPORATION	发明人	YOSHIDA, NAOYUKI
分类号	H01L27/105;H01L27/108;(IPC1-7):H01L29/68;H01L29/78;H01L29/92	主分类号	H01L27/105
代理机构		代理人
主权项
地址

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