| 摘要 |
<p>PURPOSE:To improve stability, by applying a strong electric field under ultra- high vacuum, after subjecting the surface of a carbon titanium nitride mono crystal emitter to treatment with a gas including H2S or S. CONSTITUTION:After the surface of a TiCN emitter is subject to treatment at 900-1,400 deg.C, with a gas including H2S or S, or treated through the above- mentioned treatment and a treatment with O2 gas and/or C2H4 or other hydro- carbon gases in parallel, a strong electric field of 10<7>V/cm or more is further applied to the emitter under ultra-high vacuum. After the H2S treatment, the emitter is further heated to 900-1,400 deg.C in O2, where the heating time is chosen to be 5L or more. It is also possible to perform the H2S gas treatment after carrying out the O2 treatment in the reverse way, or they can be performed simultaneously as well with adjustments of introduced gas amounts to: 5: or more for O2 and 2L or more for H2S. These treatments allow simple manufacture of a field emitter presenting excellent stability.</p> |
