| 摘要 |
PURPOSE:To lessen the process of manufacturing a ROM semiconductor memory device in turnaround time by a method wherein a ROM code write process is postponed as late as possible. CONSTITUTION:The surface of a gate electrode 24 of a matrix transistor is selectively exposed making use of a contact process, phosphorus ions are so implanted as to pass through the gate electrode 24, an N<->-type channel diffusion layer 29 is formed on the channel region of the matrix transistor, and then a ROM code is written. Thereafter, the gate electrode 24 is sealed up with an aluminum cap 31. |
