| 摘要 |
<p>PURPOSE:To obtain semiconductor light modulation element which enables actual optical system application using a quantum well structure. CONSTITUTION:In an optical switching element where a multiple quantum well structure 2 of InGaAsP/InP group is formed on an n-type InP substrate 1, a p-type InP layer 3 is formed thereon with a striped pattern and a crossing waveguide 4 is formed by an n-type InP layer so that the p-type InP layer 3 is located at the crossing portion, tensile stress is given to the InGaAs well layer 21 of the multiple quantum well structure 2 and compression stress to the InGaAsP barrier layer 22 to enable the optical switching without wavelength shift and dependence on polarized plane.</p> |
