| 摘要 |
<p>PURPOSE:To realize compactness and thinning, to improve high frequency characteristics and to acquire a stable desired output by forming a unit thin film transformer by connecting a rectifying element and a thin film transformer mutually through a connection means passing through an insulating layer and by connecting a plurality of the unit thin film transformers in series. CONSTITUTION:A thin film transformer 6 is manufactured through an insulating layer on an Si substrate 10 wherein diode D1, D2 are built and unit thin film transformers A of an integer (j) exceeding two are formed on the Si substrate 10 by connecting the diodes D1, D2 and the thin film transformer 6. A primary winding of the unit thin film transformers A of m-units (m is an arbitrary integer, m<=j and j/m is an integer.) are connected in series and a secondary winding thereof is connected in series through the diodes D1, D2 for finning to an n-sets (n is an integer equal j/m) of units. A primary side of the n-sets of units is connected in series and a secondary side thereof is connected parallel. Thereby, a stable desired output voltage and electric power can be acquired.</p> |
