| 摘要 |
<p>PURPOSE:To provide a thin film transistor having less parasitic capacitance between a source/drain and a gate and less leakage current. CONSTITUTION:A thin film transistor is formed on an insulating substrate 1. The transistor is of inversely staggered structure, where a gate insulating film 3, a semiconductor active layer 4, a source electrode 7, and a drain electrode 8 are successively laminated on a gate electrode 2. The gate electrode 2 is provided with rugged side faces along the crosswise direction of a channel region. The ends of the source electrode 7 and the drain electrode 8 are matched to the rugged end faces of the gate electrode 2 and and small in overlap area with the gate electrode 2.</p> |
