| 摘要 |
<p>PURPOSE:To prevent the slip by mechanical stress from occurring in a substrate at vapor growth to the utmost even if the revolution of a susceptor increases or the substrate is enlarged. CONSTITUTION:This is a vapor growth device which grows a film on a substrate in vapor phase by introducing reactive gas into a reactor and heating the substrate placed on the susceptor while rotating it through the susceptor arranged in this reactor. And, a seat 14a along the external form of the substrate 3 placed on the surface of the susceptor is made, coaxially with the susceptor on the surface of the susceptor 14, and at least one or more projections 14c projecting inward are provided on the opposite side to the side corresponding to the main flat 3a provided on the substrate 3 at the inside periphery of this seat 14a.</p> |
