| 摘要 |
<p>PURPOSE:To attain continuous reading in each page by providing this semiconductor memory with the 1st and 2nd modes for outputting the contents of a data register successively from the 1st and 2nd prescribed columns to the external when a selected row is switched. CONSTITUTION:A redundant memory consisting of 8 bytes is added to a memory cell consisting of 512 bytes. One NAND bundle is constituted of 8 memory cells connected in series, a drain side select line 101 and a source side select line 103 and eight pages are constituted of plual NAND bundles in the column direction. The semiconductor memory with the above constitution is provided with the 1st reading mode for starting data reading from an inputted main body address, serially reading out data up to a final column including the redundant memory and then starting the reading of the next page from address '0' in main body column addresses and the 2nd reading mode for reading out data from an optional address inputted as data up to the final column in the redundant memory cell and then starting the reading of the next page from the address '0' of a redundant column.</p> |
