| 摘要 |
<p>PURPOSE:To stably obtain the thin-film element having stable characteristics with a high yield by forming tantalum oxide film contg. phosphorus as a ground layer on a substrate, then forming the thin-film element on this ground layer. CONSTITUTION:The ground surface film 1 is formed of the tantalum oxide film. This ground layer is obtd. by anodizing a Ta film 2 of about 3000Angstrom for two hours in 2vol.% aq. phosphorus oxidizing soln. under the conditions of 150V and 2mA. The difficulty in etching of the tantalum oxide film contg. the phosphorus until the film is completely etched is 5 to 6 times higher than the difficulty in etching of the tantalum oxide film without contg. the phosphorus if the resulted tantalum oxide film is subjected to chemical etching by the plasma of a gaseous mixture composed of CF4 and O2. Then, the ground surface film 1 is hardly etched and the substrate 5 is protected if the tantalum oxide film contg. the phosphorus is used as the ground layer 1.</p> |
