| 摘要 |
PURPOSE:To prevent the formation of a lump of precipitated gold, etc., even when the diameter of a semiconductor wafer is increased by uniformly and efficiently diffusing a heavy metal, such as gold, platinum, etc., as a life-time killer. CONSTITUTION:When the title manufacturing method by which a semiconductor device in which impurities of heavy metals composed essentially of Au are diffused as a life-time killer is used for manufacturing a semiconductor device, a semiconductor wafer 6 with a rear surface coated with Au 7, etc., is set in the chamber 2 of a lamp annealer and Au, etc., are diffused in the wafer 6 by heating the wafer 6, and then, the wafer 6 is quenched by introducing a cooling gas, such as He gas, H2 gas, etc., into the chamber 2 after stopping the heating source 4.
|
